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New Vishay Siliconix PowerPAK® ChipFET® Power MOSFETs Replace TSOP-6 Devices with 75 % Lower Thermal Resistance in 33 % Smaller Footprint
New Products Offer Same 3-W Maximum Power Dissipation as Larger SO-8, Providing Greater Thermal Efficiency
MALVERN, Pa. — July 16, 2007 — In a move to address the growing demand for thermally efficient power semiconductors in smaller footprints, Vishay Intertechnology, Inc. (NYSE: VSH) today released seven p-channel power MOSFETs in a new PowerPAK® ChipFET® package that offers advanced thermal performance in a compact 3‑mm by 1.8‑mm footprint.
Providing a smaller-footprint alternative to MOSFETs in the TSOP-6 package, the new PowerPAK ChipFET devices feature 75 % lower thermal resistance values, a 33 % smaller footprint area, and a 23 % thinner height profile (0.8 mm).
Maximum power dissipation is 3 W, the same as for the much larger SO-8 package.
With their low conduction losses and enhanced thermal efficiency, p-channel power MOSFETs in Vishay's new PowerPAK ChipFET family enable longer battery run times in portable devices, where they will be used to replace load, charger, and battery MOSFET switches in the TSOP-6. Additionally, the p-channel with Schottky diode version can be used as a charger switch in portable devices or in asynchronous dc-to-dc applications, such as those found in hard disk drives and game consoles, to replace devices in the SO-8.
Because these new PowerPAK ChipFET power MOSFETs are available in a broad variety of configurations and voltages, designers can easily replace larger, less thermally efficient power MOSFETs with devices in this innovative package.
Among the seven new devices announced today are single, dual, and single with Schottky diode power MOSFETs, with breakdown voltage ratings of 12 V and 20 V.
Device Specification Table
|Part Number||VDS (V)||VGS (V)||rDS(on) @ VGS = 4.5V (Ω)||rDS(on) @ VGS = 2.5V (Ω)||rDS(on) @ VGS = 1.8V (Ω)||Datasheet||Configuration|
|73529||N and P|
Single p-channel power MOSFETs in the PowerPAK ChipFET family are rated for typical thermal resistance values as low as 3 °C/W (RthJC), with maximum on-resistance values as low as 0.021 Ω in a 20‑VDS p-channel single-channel device and 0.064 Ω in a dual-channel device—an improvement of up to 50 % compared with devices in the TSOP-6.
Complementary copackaged n- and p-channel PowerPAK ChipFET MOSFETs feature on-resistance values of 0.039 Ω for the n-channel component and 0.072 Ω for the p-channel component, a more than 35 % improvement over the lowest-rDS(on) complementary devices in the TSOP-6.
All of these new PowerPAK ChipFET devices are pin-compatible with products in the standard ChipFET package.
Samples and production quantities of the new PowerPAK ChipFET devices are available now, with lead times of 12 to 14 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.
PowerPAK and ChipFET are registered trademarks of Siliconix incorporated.