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Phone:  1.415.409.0233 
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Vishay Launches Industry-First Power MOSFETs Specifying On-Resistance at 1.2-V Gate-to-Source Voltage

N- and P-Channel TrenchFET® Devices Simplify Sub-1.8-V Portable Power Management Designs


For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, Pa. — August 15, 2007 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced the industry's first power MOSFETs with on-resistance ratings at a 1.2-V gate-to-source voltage, a move that will help designers simplify power management circuitry while extending battery run times in portable electronic systems.

The new 1.2-V-rated Vishay Siliconix TrenchFET® devices bring the MOSFET turn-on voltage into alignment with the 1.2-V to 1.3-V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs. As the first power MOSFETs that can be driven directly from 1.2-V buses, the new TrenchFETs provide the additional potential benefit of eliminating the need for an extra conversion stage in battery-operated systems with a core voltage lower than 1.8 V.

In MOSFETs where 1.5 V is the lowest rating, on-resistance tends to increase exponentially at lower, unspecified gate-to-source voltages such as 1.2 V. By contrast, these new 1.2-V TrenchFETs offer guaranteed low n-channel on-resistance as low as 0.041 Ω and p-channel on-resistance as low as 0.095 Ω at a 1.2-V gate drive. On-resistance performance at a 1.5-V gate drive is better than in devices for which 1.5 V is the lowest gate-to-source specification: as low as 0.022 (n-channel) and 0.058 (p-channel).

The devices released today (and their package types) are the n-channel SiA414DJ (PowerPAK® SC-70), Si8424DB (MICRO FOOT®), and SiB414DK (PowerPAK SC-75), and the p-channel SiA417DJ (PowerPAK SC-70), Si8429DB (MICRO FOOT), and SiB417DK (PowerPAK SC-75). The previously released p-channel Si1499DH in the SC-70 package completes Vishay's 1.2-V power MOSFET offerings.

Key Specifications

VDS = ±8 V for all devices. All devices are single-channel.

Part number

Type

rDS(ON) at VGS = 1.2 V (Ω)

rDS(ON) at VGS = 1.5 V (Ω)

Package type

SiA414DJ

n-channel

0.041

0.022

PowerPAK SC-70

Si8424DB

n-channel

0.077

0.043

MICRO FOOT

SiB414DK

n-channel

0.089

0.052

PowerPAK SC-75

SiA417DJ

p-channel

0.095

0.058

PowerPAK SC-70

Si8429DB

p-channel

0.098

0.069

MICRO FOOT

SiB417DK

p-channel

0.222

0.130

PowerPAK SC-75

Si1499DH

p-channel

0.424

0.153

SC-70

Typical applications for the new devices include load, power amplifier, and battery charger switching in cell phones, PDAs, MP3 players, digital cameras, and other portable systems. In addition to saving on battery power with their low on-resistance, the new devices will save on space with package dimensions as small as 1.5 mm by 1.5 mm.

Samples and production quantities of all seven 1.2-V devices are available now, with lead times of 8 to 10 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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TrenchFET, PowerPAK, and MICRO FOOT are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: