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Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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Vishay’s Monolithic SkyFET™ Power MOSFET and Schottky Diode Enables 6 % Improvement in DC/DC Converter Efficiency


Si4642DY

Products mentioned:

Si4642DY
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, Pa. — Dec. 12, 2007 — Vishay Intertechnology, Inc. (NYSE) today released a single-chip power MOSFET and Schottky diode device that improves operational efficiency by up to 6 percent in dc-to-dc conversion applications compared with circuits using any previous such monolithic device.

The new Vishay Siliconix Si4642DY SkyFET™ device was tested against competing single-chip MOSFET/Schottky devices as well as industry-standard discrete MOSFET and Schottky diode combinations using the same controller IC and high-side MOSFET. The circuit using the SkyFET device performed with greater efficiency whether in a light or heavy load condition. For example, efficiency greater than 91 % was demonstrated at 300 kHz and 6 A. These benefits are the results of the low forward voltage drop and reverse recovery charge of the Si4642DY’s integrated Schottky diode and the reduced PCB parasitic inductance enabled by the integration of both devices onto a single chip.

The new Si4642DY SkyFET power MOSFET will typically be used as the low-side power MOSFET in synchronous buck converters for notebook core voltage and VRM applications, graphic cards, point-of-load power conversion, and synchronous rectification in computers and servers. The new device combines a 30-V breakdown voltage with MOSFET on-resistance of 3.75 milliohms at a 10-V gate drive.

Integrating the Schottky diode with the MOSFET on a single chip not only saves board space but also improves device performance in three major ways compared to using separate or copackaged components.

First, the forward voltage drop (VF) across the Schottky diode is much lower than the voltage drop across the intrinsic body diode of the MOSFET. This results in substantially less power loss when the MOSFET is turned off during dead time in a buck converter application.

A second improvement results from the lower reverse recovery charge (QRR) of the Schottky diode compared to the QRR of the body diode of the MOSFET. Vishay Siliconix SkyFET technology reduces QRR in the device by almost 20 % from the standard MOSFET body diode, which improves converter efficiency at light loads.

Finally, integration of the Schottky into the MOSFET silicon chip eliminates the parasitic inductances that would be present if these were mounted to the PCB as individual components or if separate MOSFET and Schottky diode components were co-packaged. The result for the Si4642DY is higher efficiency and smoother waveforms, as well as a 55 % lower on-resistance at 4.5 V compared to an equivalent co-packaged MOSFET/Schottky device.

Samples and production quantities of the Si4642DY are available now, with lead times of 8 to 10 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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SkyFET is a trademark of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: