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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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New Siliconix 25-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.1-mΩ On-Resistance at 4.5 V and 1.7 mΩ at 10 V in PowerPAK® SO-8 Package

Device Offers Industry-Best On-Resistance Times Gate Charge FOM of 89.25 nC


TrenchFET Gen III

Products mentioned:

SiR476DP
SiR892DP
SiR850DP
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, PENNSYLVANIA — Oct. 22, 2008 — Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 25-V n-channel device offering the industry.s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type.

The SiR476DP features a maximum on-resistance of 2.1 mΩ at a 4.5-V gate drive and 1.7 mΩ at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89.25 nC at 4.5 V.

Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 32 % at 4.5 V and 15 % at 10 V, and a 42 % lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.

The Siliconix SiR476DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.

Vishay has also released the new 25-V SiR892DP and SiR850DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5 V of 4.2 mΩ and 9 mΩ, on- resistance at 10 V of 3.2 mΩ and 7 mΩ, with typical gate charges of 20 nC and 8.4 nC. All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the SiR476DP, SiR892DP, and SiR850DP are available now, with lead times of 10 to 12 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: