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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for 3.3-mm by 3.3-mm Footprint Area of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V


Si7615DN and Si7137DP

Products mentioned:

Si7615DN
Si7137DP
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

MALVERN, PENNSYLVANIA — May 11, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled a new 20-V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved in the PowerPAK® 1212-8 type package. With a compact 3.3-mm by 3.3-mm footprint, the device saves space by offering one third the footprint area of the PowerPAK SO-8 or SO-8 type packages.

The new Si7615DN offers an ultra-low on-resistance of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFET translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous p-channel power MOSFET on the market.

The Si7615DN will be used as the adaptor switch and for load switching applications in notebook computers, netbooks, and industrial/general systems. Adaptor switches (switching between the adaptor/wall power or the battery power) are always on and drawing current. The lower on-resistance of the Si7615DN translates into lower power consumption, saving power and prolonging battery life between charges.

The Si7615DN joins Vishay’s recently released 20-V p-channel TrenchFET Gen III Si7137DP in the PowerPAK SO-8 package. To meet the needs of individual applications, the p-channel TrenchFET Gen III packaging options offer designers a choice between the maximum drain current and power dissipation of the PowerPAK SO-8 (60 % and 75 % higher, respectively, than the SO-8) or the space savings provided by the PowerPAK 1212-8.

The Si7615DN frees up designers from having to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. Among competing 30-V devices, the lowest available p-channel on-resistance with the area of the PowerPAK 1212-8 is 14.4 mΩ and 27 mΩ at gate drives of 10 V and 4.5 V, respectively.

The device is 100 % Rg-tested and halogen-free in accordance with IEC 61249-2-21.

Samples and production quantities of the new Si7615DN TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: