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Vishay Siliconix Releases Industry's First Asymmetric Dual TrenchFET® Power MOSFET in New PowerPAIR™ 6-mm by 3.7-mm Package
Space-Saving Device Offers Low On-Resistance Down to 5.8 mΩ at 10 V and Maximum Current of 13.9 A at + 70 °C
MALVERN, PENNSYLVANIA — June 17, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first device in a series of co-packaged, asymmetric power MOSFET pairs that reduces the space required for the high- and low-side power MOSFETs in dc-to-dc converters. The industry-first SiZ700DT in the new PowerPAIR™ package, which measures 6-mm by 3.7-mm, combines a low-side and high-side MOSFET in one compact device while still obtaining low on-resistance and high maximum current, saving space over using two discrete solutions. The height of PowerPAIR is 0.75 mm typical, or 28 % thinner than the PowerPAK® 1212-8 and PowerPAK SO-8, which both have a 1.04-mm profile.
Before the PowerPAIR package type, designers would have to use two single devices to achieve the low on-resistance and high maximum current required for system power, POL, low-current dc-to-dc, and synchronous buck applications in notebooks, VRMs, power modules, graphic cards, servers, and gaming consoles, and dc-to-dc conversion in industrial systems.
For example, the regular dual PowerPAK 1212-8 has an on-resistance of about 30 mΩ with a maximum current below 10 A, not making it a viable option. A single PowerPAK 1212-8 has on-resistances down to the 5 mΩ range. The low-side Channel 2 MOSFET of the SiZ700DT, however, offers a comparable on-resistance of 5.8 mΩ at 10 V and 6.6 mΩ at 4.5 V, and a maximum current of 17.3 A at + 25 °C and 13.9 A at + 70 °C. In addition, the high-side Channel 1 MOSFET features an on-resistance of 8.6 mΩ at 10 V and 10.8 mΩ at 4.5 V, and a maximum current of 13.1 A at + 25 °C and 10.5 A at + 70 °C. These specifications allow designers to use one device, saving solution cost and space, including the clearance and labeling area in between the two discrete MOSFETs. In some lower-current and lower-voltage applications, the PowerPAIR device could even be used to replace two SO-8-packaged MOSFETs, saving at least two-thirds on space.
By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. In addition, the SiZ700DT's pinning is arranged so that a typical buck converter�s input is on one side and its output is on the other, further simplifying the layout.
The device is halogen-free according to IEC 61249-2-21.
Device Specification Table
|Qg (typ)||ID @
TA = 25 °C
TA = 70 °C
|1||20 V||± 16 V||8.6 mΩ||10.8 mΩ||9.5 nC||13.1 A||10.5 A|
|2||20 V||± 16 V||5.8 mΩ||6.6 mΩ||27 nC||17.3 A||13.9 A|
Samples of the new SiZ700DT TrenchFET power MOSFET are available now. Production quantities will be available in May, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.