For more information:
Media contact - Bob Decker, Red Pines Group
New Vishay Siliconix 12-V TrenchFET® Gen III Power MOSFET Features Industry-Best 1.2-mΩ Maximum On-Resistance at 10 V and 1.7 mΩ at 4.5 V
Device Offers Industry-Best On-Resistance Times Gate Charge FOM of 85 nC
MALVERN, PENNSYLVANIA — July 24, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of Gen III TrenchFET® power MOSFETs down to 12 V with the release of a new n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating.
The 12-V SiR494DP features a maximum on-resistance of 1.2 mΩ at a 10-V gate drive and 1.7 mΩ at a 4.5-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 85 nC at 4.5 V.
Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 40 % at 10 V and 35°% at 4.5 V, and a 29 % lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.
The Vishay Siliconix SiR494DP will be used as the low-side MOSFET in synchronous buck converters with low input voltages (5 V to 3.3 V), in OR-ing applications with low output voltages (5 V, 3.3 V, and below), and in a wide range of systems using point-of-load (POL) power conversion with input voltages of 5 V and 3.3 V, where its low conduction and switching losses will enable more efficient use of power.
For applications with low output voltages, a 12-V drain-to-source rating may be perfectly adequate, but until now designers were forced to use 20-V devices, especially if they were looking for the combination of the lowest available on-resistance and a 20-V gate-to-source drive. The SiR494DP is the first power MOSFET to combine all three: VDS = 12 V, VGS = ± 20 V, and on-resistance of just 1.2 mO at a 10-V gate drive.
The new power MOSFET is offered in the PowerPAK® SO-8 package. The device is lead (Pb)-free, halogen-free according to IEC 61249-2-21, compliant with RoHS Directive 2002/96/EC, and is 100 % Rg- and UIS-tested.
Detailed information for other devices within the n-channel TrenchFET Gen III family is available at http://www.vishay.com/mosfets/trenchfet-gen-iii/.
Samples and production quantities of the SiR494DP are available now, with lead times of 10 to 12 weeks for large orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.