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New 500-V Vishay Siliconix N-Channel Power MOSFET Features Low trr of 63 ns, Qrr of 114 nC, and On-Resistance of 1.0 O at 10 V
MALVERN, PENNSYLVANIA — April 1, 2010 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices. Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63 ns and Qrr of 114 nC, with an improved gate charge of 34 nC.
The SiHF8N50L-E3’s improved reverse recovery characteristics result in better EMI immunity and better efficiency, while avoiding internal body diode recovery failures that cause MOSFET burn-out.
The new MOSFET combines its 500-V rating with a low 1.0-O maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in LLC, full-bridge, half-bridge, and double-forward topologies for LIPS inverters, HIDs, PC power supplies, and ballasts.
For reliable operation, the device is 100 % avalanche tested. Peak current handling is 22 A pulsed and 8 A continuous (limited by maximum Junction temperature). Offered in the TO-220 FULLPAK package, the SiHF8N50L-E3 is compliant to RoHS Directive 2002/95/EC.
Samples and production quantities of the new power MOSFET are available now, with lead times of 8 to 10 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.