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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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Vishay Siliconix Introduces First 30-V P-Channel TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 Package

Device Features Industry’s Lowest On-Resistance of 7 mΩ at 10 V and 11 mΩ at 4.5 V for 30-V MOSFET in Compact 3.3-mm by 3.3-mm Footprint Area


Si7625DN Si7145DP trenchfet

Products mentioned:

Si7625DN
Si7145DP
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, PENNSYLVANIA — May 3, 2010 — Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the first 30-V p-channel TrenchFET® Gen III power MOSFET in the PowerPAK® 1212-8 package. The device features the industry’s lowest on-resistance for a p-channel MOSFET with this voltage rating in the 3.3-mm by 3.3-mm footprint area.

The new Si7625DN will be used for adaptor, load, and battery switches in notebook computers, netbooks, and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are usually on and drawing current. The lower on-resistance of the Si7625DN translates into lower power consumption, saving power and prolonging battery life between charges, while also reducing heat to enable a smaller PCB pad area. For load switches up to 24 V and hot-swap applications in industrial/general systems, the MOSFET’s low on-resistance also results in lower voltage drops.

The Si7625DN offers ultra-low on-resistance of 7 mΩ at 10 V and 11 mΩ at 4.5 V. These values are 30 % lower at 10 V and 39 % lower at 4.5 V than the previously leading 30-V device in the 3.3-mm by 3.3-mm footprint area.

The new MOSFET joins Vishay’s previously released 30-V p-channel TrenchFET Gen III Si7145DP in the PowerPAK SO-8 package. To meet the needs of individual applications, the p-channel TrenchFET Gen III packaging options offer designers a choice between the maximum drain current and power dissipation of the PowerPAK SO-8 (85 % and 79 % higher, respectively, than the SO-8) or the space savings provided by the PowerPAK 1212-8. With a compact 3.3-mm by 3.3-mm footprint, the device offers one third the footprint area of the PowerPAK SO-8 or SO-8 type packages.

The MOSFET is 100 % Rg- and UIS-tested, compliant to RoHS Directive 2002/95/EC, and halogen-free in accordance with IEC 61249-2-21.

Samples of the new Si7625DN TrenchFET power MOSFET are available now. Production quantities will be available in Q2 2010, with lead times of 16 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: