MENU
< Back  

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

Vishay Introduces Streaming Video Highlighting the SiZ700DT TrenchFET® Asymmetric Power MOSFET in the PowerPAIR® Package on Website

Video Explores How Co-Packaged Device Reduces the Space Required for the High- and Low-Side Power MOSFETs in DC/DC Converters


SiZ700DT powerpair

Products mentioned:

SiZ700DT
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, PENNSYLVANIA — June 11, 2010 — To assist customers in understanding how co-packaging high- and low-side MOSFETs in one compact device can save on space and costs for dc-to-dc converters, Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it has added a new streaming video to its website (http://www.vishay.com) highlighting the company’s SiZ700DT PowerPAIR® dual asymmetric power MOSFET solution.

Traditionally, designers have had to use two discrete MOSFETs to achieve the low on-resistance and high maximum current required for system power, POL, low-current dc-to-dc, and synchronous buck applications in notebooks, VRMs, power modules, graphic cards, servers, and gaming consoles, and dc-to-dc conversion in industrial systems.

The new video explores how Vishay’s SiZ700DT PowerPAIR solution reduces the space required for power architecture in dc-to-dc converters, allowing for increased functionality and the development of smaller end products, by combining a low-side and high-side MOSFET in one compact 6-mm by 3.7-mm device, while still obtaining low on-resistance and high maximum current.

The low-side MOSFET of the SiZ700DT offers an on-resistance of 5.8 mΩ at 10 V and a maximum current of 13.9 A at + 70 °C, while the high-side MOSFET features an on-resistance of 8.6 mΩ at 10 V and a maximum current of 10.5 A at + 70 °C. These specifications allow designers to use one device, saving solution cost and space, including the clearance and labeling area in between the two discrete MOSFETs.

By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. In addition, the SiZ700DT’s pinning is arranged so that the input is on one side and the output is on the other, further simplifying the layout.

To view the video, please go to:

http://www.vishay.com/landingpage/videos/demo_powerpair.html.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

###

TrenchFET and PowerPAIR are registered trademarks of Siliconix incorporated.

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: