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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

Vishay Siliconix Dual 20 V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance Down to 54 mΩ at 4.5 V in the 2 mm by 2 mm Footprint Area


SiA923EDJ SiA921EDJ mosfets

Products mentioned:

SiA923EDJ
SiA921EDJ
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, PENNSYLVANIA — Feb. 10, 2011 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new dual 20 V p-channel TrenchFET® Gen III power MOSFET with an 8 V gate-to-source voltage featuring the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2 mm by 2 mm footprint area.

The new SiA923EDJ will be used for dc-to-dc converters, as well as for charger and load switches in handheld devices such as smart phones, MP3 players, tablet PCs, and eBooks. The MOSFET’s lower on-resistance translates into lower conduction losses, saving power and prolonging battery life between charges in these devices.

The SiA923EDJ offers an ultra-low on-resistance of 54 mΩ at 4.5 V, 70 mΩ at 2.5 V, 104 mΩ at 1.8 V, and 165 mΩ at 1.5 V. The closest competing p-channel device with an 8 V gate-to-source rating features on-resistance of 60 mΩ at 4.5 V, 80 mΩ at 2.5 V, 110 mΩ at 1.8 V, and 170 mΩ at 1.5 V. These values are 10 %, 12 %, 5 %, and 3 % higher, respectively, than the SiA923EDJ.

The MOSFET’s on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry. The SiA923EDJ’s low on-resistance also means a lower voltage drop at peak currents to better prevent unwanted undervoltage lockout events. The compact 2 mm by 2 mm PowerPAK SC-70 package is half the size of the TSOP-6, with comparable or better on-resistance and the ability to dissipate 65 % more power under the same ambient conditions.

100 % Rg tested, the SiA923EDJ is halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2500 V.

The SiA923EDJ complements the previously released 20 V SiA921EDJ p-channel MOSFET with a 12 V gate-to-source maximum voltage rating. With the release of the SiA923EDJ, designers can now choose between the higher gate drive voltage of the SiA921EDJ or a device with a lower threshold voltage and lower on-resistance.

Samples and production quantities of the new SiA923EDJ TrenchFET power MOSFET are available now, with lead times of 14 to 16 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: