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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

New 100 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Featuring New ThunderFET® Technology Offer Lowest On-Resistance at 4.5 V VGS Rating in SO-8 and PowerPAK® SO-8 Packages


SiR870DP Si4190DY mosfets

Products mentioned:

SiR870DP
Si4190DY
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, PENNSYLVANIA — Feb. 24, 2011 — Vishay Intertechnology, Inc. (NYSE: VSH) today released two new 100 V n-channel TrenchFET® power MOSFETs with on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK® SO-8 packages. Utilizing Vishay’s new ThunderFET® technology, the SiR870DP and Si4190DY offer the lowest values of on-resistance in the industry for 100 V MOSFETs with 4.5 V ratings. In addition the product of on-resistance and gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — is also best in class.

The SiR870DP’s low on-resistance of 7.8 mΩ at 4.5 V is the industry’s lowest. This MOSFET also offers a very low on-resistance of 6 mΩ at 10 V. For designers, the device’s lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions.

With its industry-low 208 mΩ-nC FOM at 4.5 V, the SiR870DP combines low conduction and switching losses for higher frequency and switching applications. For designers requiring an SO-8 packaged device, the Si4190DY’s on-resistance of 8.8 mΩ at 10 V and 12 mΩ at 4.5 V, in addition to its FOM of 340 mΩ-nC at 10 V and 220 mΩ-nC at 4.5 V, are the industry’s best.

The devices released today are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs’ 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered. By utilizing 5 V rated ICs, gate driver losses can be reduced and the overall design simplified by eliminating the need for a separate 12 V power rail.

The SiR870DP and Si4190DY are 100 % Rg and UIS tested. The MOSFETs are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

Device Specification Table:

Part number SiR870DP Si4190DY
Package PowerPAK SO-8 SO-8
VDS (V) 100 100
VGS (V) ± 20 ± 20
RDS(ON) @ 10 V (mΩ) 6 8.8
RDS(ON) @ 7.5 V (mΩ) 6.4 -
RDS(ON) @ 4.5 V (mΩ) 7.8 12
FOM @ 10 V (mΩ-nC) 334 340
FOM @ 7.5 V (mΩ-nC) 272 -
FOM @ 4.5 V (mΩ-nC) 208 220

Samples and production quantities of the new MOSFETs are available now, with lead times of 16 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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TrenchFET, ThunderFET, and PowerPAK are registered trademarks of Siliconix incorporated.

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: