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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

New 40 V and 60 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Feature Industry-Low On-Resistance and FOMs in PowerPAK SO-8 Package


SiR662DP SiR640DP mosfets

Products mentioned:

SiR662DP
SiR640DP
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, PENNSYLVANIA — March 31, 2011 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 40 V and 60 V n-channel TrenchFET® power MOSFETs with the industry’s lowest on-resistance and on-resistance times gate charge figures of merit for devices with these voltage ratings in the SO-8 or PowerPAK® SO-8 packages.

The 60 V SiR662DP offers on-resistance of 2.7 mΩ at 10 V and 3.5 mΩ at 4.5 V, and an FOM of 172.8 mΩ-nC at 10 V and 105 mΩ-nC at 4.5 V. The device’s on-resistance values at 10 V and 4.5 V are 3.5 % lower and 27 % lower than those of the closest competing MOSFET, respectively, while its FOM is 23 % lower at 10 V and 57 % lower at 4.5 V. These low values will reduce switching losses across the whole operating range of the device.

The 40 V SiR640DP offers on-resistance of 1.7 mΩ at 10 V and 2.2 mΩ at 4.5 V, and an FOM of 128 mΩ-nC at 10 V and 76 mΩ-nC at 4.5 V. The device’s on-resistance value at 4.5 V is 4 % lower than the next best competing MOSFET, while its FOM is 15.5 % lower at 4.5 V.

Both devices are built on a new silicon technology utilizing an optimized trench density and a unique gate structure. For designers, their lower on-resistance translates into lower conduction losses for reduced power consumption, especially at heavy loads. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and stand-by mode. The devices’ high efficiency allows designers to increase the power density of their systems and/or provide lower power loss, greener solutions.

The SiR662DP and SiR640DP are intended for secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS), and consumer applications.

The MOSFETs’ 4.5 V rating will give many designers the opportunity to use a 5 V power rail in their systems, already present for powering digital logic, without having to create and find space for a 10 V power rail. The 4.5 V rating will also significantly lower gate drive losses while allowing lower-voltage/lower-cost 5 V PWM ICs to be utilized.

Both devices are 100 % Rg and UIS tested. They are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

Samples and production quantities of the SiR662DP and SiR640DP are available now, with lead times of 16 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: