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New Vishay Siliconix Power MOSFETs Offer Industry-Low On-Resistance Down to 43 mΩ at 4.5 V in Industry’s Smallest Chipscale MICRO FOOT® 0.8 mm by 0.8 mm Package
MALVERN, PENNSYLVANIA — Nov. 29, 2012 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 12 V and 20 V n-channel and p-channel TrenchFET® power MOSFETs with the industry’s lowest on-resistance in the industry’s smallest CSP form factor: the 0.8 mm by 0.8 by 0.4 mm MICRO FOOT® package.
The devices released today will be used for battery or load switching in power management applications for portable electronics such as smart phones, tablet PCs, and mobile computing devices. The MOSFETs’ compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices’ low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
For the first time in this form factor, the MOSFETs are built on an ultra-high-density technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. When combined with MICRO FOOT’s packageless CSP technology, this provides the lowest on-resistance possible for a given outline area.
For n-channel devices, the result is a 43 mΩ maximum on-resistance at a 4.5 V gate drive for the 12 V Si8806DB. When a 20 V rating is needed, the Si8812DB offers a maximum on-resistance of 59 mΩ. The n-channel devices are optimal for high-speed switching applications with fast turn-on/off times of < 100 ns, such as DC/DC boost converter applications.
The -20 V p-channel Si8817DB and Si8489EDB are optimized for buck converter applications. With 76 mΩ maximum on-resistance at a 4.5 V gate drive, the smaller 0.8 mm by 0.8 by 0.4 mm Si8817DB will be used for applications where space is even more critical than on-resistance. The 1 mm by 1 mm Si8489EDB will be used when the lower maximum on-resistance of 54 mΩ at 4.5 V is more critical.
The Si8489EDB is the first p-channel Gen III device in the 1 mm by 1 mm form factor, and provides 2500 V typical ESD protection. In addition, the Si8817DB offers on-resistance ratings down to 1.5 V, allowing the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.
The devices are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.
Device Specification Table:
|VDS (V)||12||20||- 20||- 20|
|RDS(ON) (mΩ) max. @||10 V||-||-||-||44|
|Outline (mm x mm)||0.8 x 0.8||0.8 x 0.8||0.8 x 0.8||1 x 1|
Samples and production quantities of the new TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.
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