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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

Vishay Intertechnology's P-Channel Gen III MOSFETs Offer Industry-Low RDS(on) in 3.0 mm by 1.9 mm and 3.3 mm Sq. Footprints

-12 V and -20 V Devices Offered in PowerPAK® ChipFET® and PowerPAK 1212-8S Packages


P-Channel Gen III MOSFETs

Products mentioned:

Si5411EDU
Si5415AEDU
SiSS23DN
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, Pa. — Nov. 19, 2013 — Vishay Intertechnology, Inc. (NYSE: VSH) today extended its offering of TrenchFET® p-channel Gen III power MOSFETs with new devices in the PowerPAK® ChipFET® and PowerPAK 1212-8S packages. Designed to increase power efficiency in mobile computing and industrial control devices, the Vishay Siliconix MOSFETs released today feature the industry's lowest on-resistance for -12 V and -20 V devices at -4.5 V and -2.5 V gate drives in the 3.0 mm by 1.9 mm and 3.3 mm by 3.3 mm footprint areas.

The Si5411EDU, Si5415AEDU, and SiSS23DN are optimized for load, battery, and supervisory switches in a wide range of applications, including power management in smartphones, tablets, notebooks, industrial sensors, and POL modules. The devices’ industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.

In applications where saving PCB space is critical, the -12 V Si5411EDU offers low on-resistance of 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in the 3.0 mm by 1.9 mm PowerPAK ChipFET package. When a higher voltage rating is needed, the -20 V Si5415AEDU features values of 9.6 mΩ (-4.5 V) and 13.2 mΩ (-2.5 V). Both devices provide typical ESD protection of 5000 V. For applications requiring extremely low on-resistance, the SiSS23DN provides values of 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.

The Si5411EDU, Si5415AEDU, and SiSS23DN are 100 % Rg and UIS tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.

Device Specification Table:

Part number Si5411EDU Si5415AEDU SiSS23DN
VDS (V) -12 -20 -20
VGS (V) ±8 ±8 ±8
RDS(ON) (mΩ) @ 4.5 V 8.2 9.6 4.5
3.7 V 9.4 - -
2.5 V 11.7 13.2 6.3
1.8 V 20.6 22.0 11.5
Package PowerPAK ChipFET PowerPAK ChipFET PowerPAK 1212-8s

Vishay's p-channel Gen III family now includes over 60 devices in footprints ranging from 5 mm by 6 mm down to 0.8 mm by 0.8 mm. More information on the MOSFETs can be found at http://www.vishay.com/mosfets/geniii-p/.

Samples and production quantities of the new p-channel MOSFETs are available now, with lead times of 13 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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TrenchFET, PowerPAK and ChipFET are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: