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For more information:
Media contact -  Andrew Post, Sr. Manager, Global Communications
Phone:  1.610.251.5287 
Fax:  1.610.889.9429 
E-mail:  andrew.post@vishay.com

Vishay Intertechnology’s SiZ340DT Honored Twice in Electronic Products China Magazine's Top-10 Power Product Awards

Dual MOSFET Recognized in Top-10 Power Product and Best Application Award Categories


EPC

Products mentioned:

SiZ340DT
For more information:
Media contact -  Andrew Post, Sr. Manager, Global Communications
Phone:  1.610.251.5287 
Fax:  1.610.889.9429 
E-mail:  andrew.post@vishay.com


This release in:

MALVERN, Pa. — Oct. 21, 2014 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its SiZ340DT dual MOSFET in a 3 mm by 3 mm package has been named as a winner twice in Electronic Products China magazine's Twelfth Annual Top-10 Power Product Awards. Providing 57 % lower on-resistance, up to 25 % higher power density, and 5 % higher efficiency than previous-generation devices of the same size, the SiZ340DT was honored in the Top-10 Power Product and Best Application categories.

The editors of Electronic Products China evaluated hundreds of products launched in the previous year on the basis of innovative design, significant advancement in technology or application, and substantial achievement in price and performance. Vishay’s SiZ340DT was selected as a winner in two categories for its ability to save space and simplify the design of highly efficient synchronous buck converters in “cloud computing” infrastructures, servers, telecommunications equipment, and various client-side electronic devices and mobile computing applications.

Built on TrenchFET® Gen IV technology, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1 mΩ at a 10 V gate drive and 7.0 mΩ at 4.5 V. The high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. At the same time, the device maintains a low gate charge of 5.6 nC for the Channel 1 MOSFET and 10.1 nC for Channel 2. The resulting low on-resistance times gate charge FOM reduces conduction and switching losses to improve total system efficiency.

For typical DC/DC topologies with 10 A to 15 A output current and an output voltage below 2 V, the compact 3 mm by 3 mm footprint area of the SiZ340DT’s PowerPAIR® package saves up to 77 % PCB space compared to using discrete solutions. Reducing switching losses, the device allows higher switching frequencies beyond 450 kHz to shrink the PCB size, without sacrificing efficiency, by enabling the use of smaller inductors and capacitors.

The Electronic Products China Top-10 Power Product Awards were presented during a ceremony held on Sep. 25 at The Presidential Hotel Beijing. Alice Wei, Sales Account Manager at Vishay’s Beijing office, accepted the award on behalf of Vishay. The complete list of winners is available at the following web address:

http://www.21ic.com/wz/CRXDQWHFA/20140901/20140901.htm.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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TrenchFET is a registered trademark of Vishay Siliconix.

For more information:
Media contact -  Andrew Post, Sr. Manager, Global Communications
Phone:  1.610.251.5287 
Fax:  1.610.889.9429 
E-mail:  andrew.post@vishay.com


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