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Vishay Intertechnology’s New 650 V Fast Body Diode MOSFETs Increase Voltage Headroom for Soft Switching in Industrial, Telecom, and Renewable Energy Applications


For more information:
Media contact -  Bob Decker, Red Pines Group
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

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MALVERN, Pa. — May 5, 2016 — Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its portfolio of fast body diode n-channel power MOSFETs with the introduction of new 650 V EF Series devices. Augmenting the company’s 600 V offering, the Vishay Siliconix SiHx21N65EF, SiHx28N65EF, and SiHG33N65EF provide additional voltage headroom for industrial, telecom, and renewable energy applications when desired.

Built on E Series superjunction technology, the 650 V fast body diode MOSFETs released today feature a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress and increasing reliability in zero voltage switching (ZVS) / soft switching topologies such as phase-shifted bridges, LLC converters, and 3-level inverters.

The 21 A SiHx21N65EF is offered in five packages, while the 28 A SiHx28N65EF and 33 A SiHG33N65EF are each available in two. The devices feature low on-resistance down to 157 mΩ 102 mΩ and 95 mΩ respectively, and ultra-low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, external electric vehicle (EV) charging stations, and LED, high-intensity discharge (HID), and fluorescent ballast lighting.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free.

Device Specification Table:

Part # RDS(ON)(mΩ)
@ 10 V

(max.)
Qg(nC)
@ 10V

(typ.)
ID (A)
@ 25 °C
Qrr (µC)@
25 °C (typ.)
Package
SiHA21N65EF 180 71 21 1.2 Thin-lead TO-220 FullPAK
SiHB21N65EF 180 71 21 1.2 D2PAK (TO-263)
SiHG21N65EF 180 71 21 1.2 TO-247AC
SiHH21N65EF 157 68 21 0.9 PowerPAK® 8x8
SiHP21N65EF 180 71 21 1.2 TO-220AB
SiHG28N65EF 102 97 28 1.1 TO-247AC
SiHP28N65EF 102 97 28 1.1 TO-220AB
SiHG33N65EF 95 114 33 1.18 TO-247AC

Samples and production quantities of the new 650 V EF Series MOSFETs are available now, with lead times of 16 to 18 weeks for large orders.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.TM Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.vishay.com.

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For more information:
Media contact -  Bob Decker, Red Pines Group
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: