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For more information:
Media contact -  Andrew Post, Sr. Manager, Global Communications
Phone:  1.610.251.5287 
Fax:  1.610.889.9429 
E-mail:  andrew.post@vishay.com

Sales contact: 

Vishay Intertechnology Releases Industry’s First AEC-Q101-Qualified 12 V and 20 V MOSFETs in a Dual Asymmetric Package for Synchronous Buck Applications


SQJ200EP SQJ202EP MOSFETs

Products mentioned:

SQJ200EP
SQJ202EP
For more information:
Media contact -  Andrew Post, Sr. Manager, Global Communications
Phone:  1.610.251.5287 
Fax:  1.610.889.9429 
E-mail:  andrew.post@vishay.com

Sales contact: 

This release in:

MALVERN, Pa. — June 22, 2016 — To save space and power in high-efficiency synchronous buck converters for automotive applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the industry’s first AEC-Q101-qualified 12 V and 20 V MOSFETs in a dual asymmetric power package. The Vishay Siliconix SQJ202EP and SQJ200EP n-channel TrenchFET devices each combine a high- and low-side MOSFET in the compact 5 mm by 6 mm PowerPAK SO-8L dual asymmetric package, with low-side maximum on-resistance down to 3.3 mΩ.

By co-packaging two MOSFETs in an asymmetric package — with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching — the 12 V SQJ202EP and 20 V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high current high frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts.

The devices released today offer high-temperature operation to +175 C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation, and LED lighting. The SQJ202EP is well suited for applications with bus voltages ≤ 8 V and offers extremely low maximum on-resistance down to 3.3 mΩ for the Channel 2 low-side MOSFET. For applications with higher bus voltages, the 20 V SQJ200EP features a slightly higher maximum on-resistance of 3.7 mΩ. Both parts are 100 % tested for gate resistance and avalanche, and are RoHS-compliant and halogen-free.

Device Specification Table:

Part number SQJ202EP SQJ200EP
Channel 1 2 1 2
VDS (V) 12 20
RDS(ON) (Ω)
Max.
@ VGS = 10 V 0.0065 0.0033 0.0088 0.0037
@ VGS = 4.5 V 0.0093 0.0045 0.0124 0.0050
Qg (nC) Typ. @ VGS = 10 V 14.5 35.9 12 29
ID(A) 20 60 20 60

Samples and production quantities of the SQJ200EP and SQJ202EP are available now, with lead times of 12 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Andrew Post, Sr. Manager, Global Communications
Phone:  1.610.251.5287 
Fax:  1.610.889.9429 
E-mail:  andrew.post@vishay.com

Sales contact: 

This release in: