*Aug 29, 2011 *Doc. ID: 63443, ECN S11-1702, Rev. A *File Name: Si4776DY_PS.txt and Si4776DY_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product datasheet. Designers should refer to the *appropriate datasheet of the same number for guaranteed specification *limits. .SUBCKT Si4776DY D G S X1 D G S Si4776DY_nmos X2 S D Si4776DY_schottky .ENDS Si4776DY .SUBCKT Si4776DY_nmos D G S M1 3 GX S S NMOS W= 1255969u L= 0.25u M2 S GX S D PMOS W= 1255969u L= 2.524e-07 R1 D 3 3.647e-03 TC=1.427e-02 2.672e-05 CGS GX S 3.171e-10 CGD GX D 2.168e-11 RG G GY 0.8 RTCV 100 S 1e6 TC=-4.378e-05 4.801e-07 ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 + RS = 8.290e-03 KP = 1.801e-05 NSUB = 7.171e+16 + KAPPA = 6.386e-05 ETA = 2.590e-06 NFS = 7.130e+11 + LD = 0 IS = 0 TPG = 1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 +NSUB = 2.401e+16 IS = 0 TPG = -1 ) **************************************************************** .ENDS Si4776DY_nmos .subckt Si4776DY_schottky 7 5 d1 7 5 sdsm d2 7 5 sdlg d3 7 4 sdrev d4 5 4 sdblk .model sdsm d (IS = 9.120e-10 N = 1.351e+00 EG = 1.059e+00 +XTI = 5.039e+00 RS = 5.378e-03 TRS1 = 2.826e-03 ) .model sdlg d (IS = 3.841e-06 N = 1.106e+00 EG = 6.069e-01 +XTI = 2.874e-01 RS = 8.294e-02 TRS1 = 7.355e-03 +VJ = 4.098e-01 CJO = 4.346e-10 M = 3.817e-01 +TT = 9.969e-09 ) .model sdrev d (IS = 1.1659e-05 N = 1.045e+00 EG = 5.013e-01 +XTI = 4.358e+00 ) .model sdblk d (IS = 1e-11 N=1) .ends Si4776DY_schottky