*Apr 05, 2010
*Doc. ID: 66506, ECN S10-0747, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet. Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT SiB417EDK D G S 
x1  D G S SiB417EDK_mos
x2  G S     SiB417EDK_esd
.ENDS  SiB417EDK
.SUBCKT SiB417EDK_mos D G S 
M1 3 GX S S PMOS W= 467182u L= 0.25u 
M2 S GX S D NMOS W= 467182u L= 4.448e-07 
R1 D 3 5.000e-05 1.312e-02 -5.000e-04 
CGS GX S 1.214e-10 
CGD GX D 1.249e-11 
RG G GY 9.5 
RTCV 100 S 1e6 -1.476e-04 -1.874e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.3e-8 
+ RS = 3.004e-02 KP = 1.293e-05 NSUB = 5.721e+13 
+ KAPPA = 7.297e-06 ETA = 3.109e-04 NFS = 2.770e+12 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.3e-8 
+NSUB = 1.720e+17 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-07 TREF = 25 BV = 10 
+RS = 3.788e-02 N = 1.517e+00 IS = 1.000e-07 
+EG = 8.729e-01 XTI = 8.990e-01 TRS = 1.000e-05 
+CJO = 1.743e-10 VJ = 6.057e-01 M = 3.076e-01 ) 
.ENDS SiB417EDK_mos
.subckt SiB417EDK_esd 2 1
r1 1 9 1.749e+05 TC= -5.852e-03 
d1 9 2 dleak 
.MODEL dleak d (IS = 9.027e-08 XTI = 4.901e+02 EG = 1.17 
+ TREF = 25 TCV = 0 N = 3.592e+01 BV = 50) 
r2 1 10 1.425e+02 TC= -4.920e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 2.908e-13 XTI = -1.199e+01 EG = 1.17 
+ TREF = 25 TCV = 6.583e-03 N = 2.979e+00 BV = 5.406e+00 ) 
.ends SiB417EDK_esd