*Apr 05, 2010 *Doc. ID: 66508, ECN S10-0747, Rev. A *File Name: SiB417EDK_PS.txt and SiB417EDK_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT SiB417EDK D G S x1 D G S SiB417EDK_mos x2 G S SiB417EDK_esd .ENDS SiB417EDK .SUBCKT SiB417EDK_mos D G S M1 3 GX S S PMOS W= 467182u L= 0.25u M2 S GX S D NMOS W= 467182u L= 4.448e-07 R1 D 3 5.000e-05 TC=1.312e-02 -5.000e-04 CGS GX S 1.214e-10 CGD GX D 1.249e-11 RG G GY 9.5 RTCV 100 S 1e6 TC=-1.476e-04 -1.874e-06 ETCV GY GX 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD D S DBD **************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.3e-8 + RS = 3.004e-02 KP = 1.293e-05 NSUB = 5.721e+13 + KAPPA = 7.297e-06 ETA = 3.109e-04 NFS = 2.770e+12 + LD = 0 IS = 0 TPG = -1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.3e-8 +NSUB = 1.720e+17 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 2.000e-07 T_MEASURED = 25 BV = 10 +RS = 3.788e-02 N = 1.517e+00 IS = 1.000e-07 +EG = 8.729e-01 XTI = 8.990e-01 TRS1 = 1.000e-05 +CJO = 1.743e-10 VJ = 6.057e-01 M = 3.076e-01 ) .ENDS SiB417EDK_mos .subckt SiB417EDK_esd 2 1 r1 1 9 1.749e+05 TC= -5.852e-03 d1 9 2 dleak .MODEL dleak d (IS = 9.027e-08 XTI = 4.901e+02 EG = 1.17 + T_MEASURED = 25 TBV1 = 0 N = 3.592e+01 BV = 50) r2 1 10 1.425e+02 TC= -4.920e-03 d3 11 10 dout d4 11 2 dout .MODEL dout D (IS = 2.908e-13 XTI = -1.199e+01 EG = 1.17 + T_MEASURED = 25 TBV1 = 6.583e-03 N = 2.979e+00 BV = 5.406e+00 ) .ends SiB417EDK_esd