*Apr 05, 2010 *Doc. ID: 66523, ECN S10-754, Rev. A *File Name: SiA519EDJ_PS.txt and SiA519EDJ_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT SiA519EDJ D1 G1 S1 D2 G2 S2 X1 D1 G1 S1 SiA519EDJN X2 D2 G2 S2 SiA519EDJP .ENDS SiA519EDJ *N-CH .SUBCKT SiA519EDJN D G S x1 D G S SiA519EDJN_mos x2 G S SiA519EDJN_esd .ENDS SiA519EDJN .SUBCKT SiA519EDJN_mos D G S M1 3 GX S S NMOS W= 434656u L= 0.25u M2 S GX S D PMOS W= 434656u L= 4.893e-07 R1 D 3 1.233e-02 TC=1.058e-02 9.047e-06 CGS GX S 2.406e-10 CGD GX D 8.215e-12 RG G GY 3.5 RTCV 100 S 1e6 TC=-1.521e-04 -2.584e-07 ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 + RS = 1.829e-02 KP = 3.092e-05 NSUB = 1.153e+17 + KAPPA = 1.291e-02 ETA = 7.351e-05 NFS = 5.928e+11 + LD = 0 IS = 0 TPG = 1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 +NSUB = 1.625e+16 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 1.157e-08 T_MEASURED = 25 BV = 22 +RS = 2.628e-02 N = 1.196e+00 IS = 1.376e-10 +EG = 8.853e-01 XTI = 5.888e+00 TRS1 = 3.275e-04 +CJO = 6.541e-11 VJ = 4.104e-01 M = 2.000e-01 ) .ENDS SiA519EDJN_mos .subckt SiA519EDJN_esd 1 2 r1 1 9 9.422e+06 TC= -7.063e-03 d1 9 2 dleak 1 .MODEL dleak d (IS = 4.652e-10 XTI = 5.768e+02 EG = 1.17 + T_MEASURED=25 TBV1 = 0 N = 4.541e+01 BV = 50) r2 1 10 2.712e+02 TC= -4.115e-03 d3 11 10 dout 0.514 d4 11 12 dout 0.514 d5 13 12 dout 0.575 d6 13 2 dout 0.575 .MODEL dout D (IS = 1.763e-10 XTI = 1.433e+01 EG = 1.17 + T_MEASURED=25 TBV1 = -3.285e-03 N = 2.898e+00 BV = 6.560e+00 ) .ends SiA519EDJN_esd *P-CH .SUBCKT SiA519EDJP D G S x1 D G S SiA519EDJP_mos x2 G S SiA519EDJP_esd .ENDS SiA519EDJP .SUBCKT SiA519EDJP_mos D G S M1 3 GX S S PMOS W= 646000u L= 0.25u M2 S GX S D NMOS W= 646000u L= 5.800e-07 R1 D 3 9.284e-03 TC=2.754e-02 -4.830e-06 CGS GX S 7.535e-11 CGD GX D 2.112e-11 RG G GY 10 RTCV 100 S 1e6 TC=-2.620e-04 -1.367e-06 ETCV GY GX 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD D S DBD **************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 + RS = 5.419e-02 KP = 7.472e-06 NSUB = 4.303e+15 + KAPPA = 7.550e-03 ETA = 1.000e-07 NFS = 1.209e+12 + LD = 0 IS = 0 TPG = -1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 +NSUB = 4.410e+16 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 1.401e-08 T_MEASURED = 25 BV = 22 +RS = 2.538e-02 N = 1.735e+00 IS = 1.000e-07 +EG = 1.054e+00 XTI = 6.603e-01 TRS1 = 1.000e-05 +CJO = 6.502e-11 VJ = 3.054e-01 M = 2.000e-01 ) .ENDS SiA519EDJP_mos .subckt SiA519EDJP_esd 2 1 r1 1 9 5.000e+06 TC= -5.116e-03 d1 9 2 dleak .MODEL dleak d (IS = 9.621e-11 XTI = 4.704e+02 EG = 1.17 + T_MEASURED=25 TBV1 = 0 N = 4.010e+01 BV = 50) r2 1 10 1.045e+02 TC= -1.899e-03 d3 11 10 dout d4 11 2 dout .MODEL dout D (IS = 1.000e-12 XTI = 4.000e+01 EG = 1.17 + T_MEASURED=25 TBV1 = -5.477e-03 N = 3.480e+00 BV = 1.323e+01 ) .ends SiA519EDJP_esd