********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Apr 16, 2018
*ECN S18-0449, Rev. A
*File Name: SiSS04DN_PS.txt and SiSS04DN_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiSS04DN D G S 
M1 3 GX S S NMOS W= 10135000u L= 0.30u 
M2 S GX S D PMOS W= 10135000u L= 0.12u 
R1 D 3 8.000e-04 TC=2.751e-03,1.116e-05
CGS GX S 2.134e-09 
CGD GX D 1.000e-13 
RG G GY 0.7 
RTCV 100 S 1e6 TC=1.116e-05,2.372e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 10135000u 
*************************************************  
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 4e-8 
+ RS = 0 KP = 1.699e-05 NSUB = 1.231e+17 
+ KAPPA = 8.034e-02 NFS = 1.006e+10 
+ LD = 0 IS = 0 TPG = 1    )
************************************************* 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 4e-8 
+NSUB = 4.859e+16 IS = 0 TPG = -1    )
************************************************* 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-07 T_measured = 25 BV = 31
+RS = 5.247e-03 N = 1.108e+00 IS = 4.377e-12 
+EG = 8.364e-01 XTI = 9.983e+00 TRS1 = 1.000e-05
+CJO = 4.202e-10 VJ = 6.621e+00 M = 9.990e-01 ) 
.ENDS 
