*May 16, 2005
*Doc. ID: 76635, S-50836, Rev. B
.SUBCKT Si4390DY 4 1 2
M1  3 1 2 2 NMOS W=2276236u L=0.25u       
M2  2 1 2 4 PMOS W=2276236u L=0.30u  
R1  4 3     RTEMP 5E-3
CGS 1 2     1100E-12
DBD 2 4     DBD
****************************************************************  
.MODEL  NMOS       NMOS (  LEVEL  = 3           TOX    = 5E-8
+ RS     = 2E-3            RD     = 0		NSUB   = 1.82E17      
+ KP     = 9E-6            UO     = 650 	
+ VMAX   = 0               XJ     = 5E-7        KAPPA  = 1E-3
+ ETA    = 1E-4            TPG    = 1  
+ IS     = 0               LD     = 0                             
+ CGSO   = 0               CGDO   = 0           CGBO   = 0 
+ TLEV   = 1               BEX    = -1.5        TCV    = 5.2E-3
+ NFS    = 0.8E12          DELTA  = 0.1)
**************************************************************** 
.MODEL  PMOS       PMOS (  LEVEL  = 3           TOX    = 5E-8
+NSUB    = 3E16            TPG    = -1)           
 *************************************************************** 
.MODEL DBD D (CJO=1520E-12 VJ=0.38 M=0.32
+RS=0.1 FC=0.1 IS=1E-12 TT=5E-8 N=1 BV=30.2)
**************************************************************** 
.MODEL RTEMP R (TC1=6.5E-3 TC2=5.5E-6)
**************************************************************** 
.ENDS