*July 13, 2004
.SUBCKT Si4812BDY 4 1 2
M1  3 1 2 2 NMOS W=1991950u L=0.25u  
M2  2 1 2 4 PMOS W=1991950u L=0.30u 
R1  4 3     RTEMP 7.2E-3
CGS 1 2     600E-12
DBD 2 4     DBD
XSD 2 4     Si4812BDY_SCHOTTKY
*************************************************************** 
.MODEL  NMOS       NMOS ( LEVEL  = 3            TOX    = 5E-8
+ RS     = 5E-3           RD     = 0            NSUB   = 2.75E17
+ KP     = 1.87E-5        UO     = 400             
+ VMAX   = 0              XJ     = 5E-7         KAPPA  = 1E-4
+ ETA    = 3E-4           TPG    = 1  
+ IS     = 0              LD     = 0               
+ CGSO   = 0              CGDO   = 0            CGBO   = 0 
+ TLEV   = 1              BEX    = -1.5         TCV    = 4.65E-3
+ NFS    = 0.8E12         DELTA  = 0.1)
*************************************************************** 
.MODEL  PMOS       PMOS ( LEVEL  = 3            TOX    = 5E-8
+NSUB    = 3E16           TPG    = -1)   
***************************************************************  
.MODEL DBD D (CJO=600E-12 VJ=0.38 M=0.34
+RS=0.1 FC=0.5 IS=1E-12 TT=5E-8 N=1 BV=30.2)
*************************************************************** 
.MODEL RTEMP R (TC1=7.5E-3 TC2=5.5E-6)
**************************************************************** 
.ENDS Si4812BDY
.subckt Si4812BDY_SCHOTTKY 7 5
r1 6 5  rtemp 0.036
d1 7 6  sdiode 
****************************************************
.model sdiode d (cjo=300e-12 vj=0.38 xti=2 
+rs=0 fc=0.5 is=1.4e-6 ik=0.85 eg=0.69 n=1 bv=32)
*****************************************************
.model rtemp r (tc1=0.31e-2   tc2=30e-6)
.ENDS Si4812BDY_SCHOTTKY