*September 05, 2005
*Doc. ID: 77776, S-51624, Rev. B
.SUBCKT Si7686DP 4 1 2
M1  3 1 2 2 NMOS W=2322609u L=0.25u 
M2  2 1 2 4 PMOS W=2322609u L=0.22u   
R1  4 3     RTEMP 3E-3
CGS 1 2     750E-12
DBD 2 4     DBD
************************************************************  
.MODEL  NMOS         NMOS (LEVEL  = 3        TOX    = 5E-8
+ RS     = 4E-3            RD     = 0        NSUB   = 3E17  
+ KP     = 1.9E-5          UO     = 650             
+ VMAX   = 0               XJ     = 5E-7     KAPPA  = 3E-1
+ ETA    = 1E-4            TPG    = 1  
+ IS     = 0               LD     = 0                             
+ CGSO   = 0               CGDO   = 0        CGBO   = 0 
+ TLEV   = 1               BEX    = -1.5     TCV    = 4E-3
+ NFS    = 0.8E12          DELTA  = 0.1)
************************************************************  
.MODEL  PMOS         PMOS (LEVEL  = 3        TOX    = 5E-8
+NSUB    = 4E16            TPG    = -1)   
************************************************************  
.MODEL DBD D (CJO=400E-12 VJ=0.38 M=0.25
+RS=0.01 FC=0.1 IS=1E-12 TT=2.8E-8 N=1 BV=30.2)
************************************************************ 
.MODEL RTEMP R (TC1=8.5E-3 TC2=5.5E-6)
************************************************************  
.ENDS