*Oct 3, 2005 *Doc. ID: 77838, S-51946, Rev. A .SUBCKT Si7866ADP 4 1 2 M1 3 1 2 2 NMOS W=10837062u L=0.25u M2 2 1 2 4 PMOS W=10837062u L=0.25u R1 4 3 RTEMP 8E-4 CGS 1 2 3700E-12 DBD 2 4 DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 5E-8 + RS = 10E-4 RD = 0 NSUB = 2.35E17 + kp = 1.9E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 1E-2 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 4.5E-3 + NFS = 0.8E12 DELTA = 0.1) **************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 5E-8 +NSUB = 3E16 TPG = -1) **************************************************************** .MODEL DBD D (CJO=2500E-12 VJ=0.38 M=0.30 +FC=0.1 IS=1E-12 TT=6E-8 N=1 BV=21) **************************************************************** .MODEL RTEMP R (TC1=8E-3 TC2=5.5E-6) **************************************************************** .ENDS