********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
BYT56 

BYT56 


* Technology: DISCRETE DIODE 
* Device: Rectifier Diode BYT 56 G 
* Description: 
* Type: Typical (nom) 
* Model established: 02.12.1996, by S.Reuter, TM1iC63-HN 
* Wafer: 
* Remarks: 
* Revision: 02.12.1996 
* Simulation Model: Macro Model 
* Simulator: PSPICE 
.SUBCKT BYT56G a c

 DF a c DFOR

 DR a c DREV 

.MODEL DFOR D

 + IS = 600p RS = 370m N = 1.2 IKF= 8m 
+ CJO=87.5p VJ = 500m M = 375m FC = 700m 
+ TT = 240n XTI= -2 EG =1.186 
.MODEL DREV D

 + IS = 50n N = 5 XTI= 75 EG =1.186 
.ENDS BYT56G 

Seite 1