********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Aug 29, 2016
*ECN S16-1674, Rev. B
*File Name: SiHP28N65E_PS.txt and SiHP28N65E_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiHP28N65E D G S
M1 3 GX S S NMOS W= 2643300u L= 2u 
M2 S GX S D PMOS W= 2643300u L= 2.5u 
M2B S GX S 3 PMOS2 W= 2643300u L= 2u 
R1 4 3 4.480e-02 TC=6.594e-03,-0.500e-05
J1 D S 4 JD 2643300u 
.MODEL JD NJF (VTO = -1.527e+01 BETA = 2.237e-01 LAMBDA = 1.000e-02 
+BETATCE = -1.182e+00 VTOTC = -0.04864 IS = 1e-18 N = 10 )
CGS GX S 2.317e-09 
CGD GX D 5.479e-12 
RG G GY 0.7 
RTCV 100 S 1e6 TC=3.507e-03,0
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 2643300u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 1.040e-05 NSUB = 7.755e+16 
+ KAPPA = 8.613e-02 NFS = 1.000e+12 
+ LD = 0 IS = 0 TPG = 1 )
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 5.000e+13 IS = 0 TPG = -1    )
.MODEL PMOS2 PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 3e13 IS = 0 TPG = -1 )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.200e-06 T_measured = 25 BV = 651
+RS = 9.295e-03 N = 1.427e+00 IS = 7.083e-10 
+EG = 1.224e+00 XTI = 1.223e+00 TRS1 = 3.708e-03
+CJO = 5.430e-09 VJ = 1.866e+00 M = 9.990e-01 ) 
.ENDS 
