*produced by Vishay General Semiconductor Taiwan
*Sam Liao, 2022/11/7


.SUBCKT 5KASMC40A a c 
.PARAM RL       = 2e+07
.PARAM RBD      = 0.233
.PARAM RBVC     = 46800

DF a 90 DF

* Leakage
RL a 90 'RL'


* Breakdown
RBD 90 4 'RBD'
EBD 4 3 10 20 1
DBD 3 a DBD
IBVC 0 10 0.001
RBVC 10 0 RBVC 'RBVC'

RBDX 20 23 'RBD'
DBVC 23 0 DBD
IBVD 0 20 0.001
L1 90 c 1E-015


.MODEL DF D (
+ T_MEASURED= 25             IS       = 1.66667e-10    RS       = 0.01375        
+N        = 1.35417        CJO      = 4.2e-09        VJ       = 1.0125         
+M       = 0.36875        FC       = 0.5            TT       = 1e-08          
+XTI      = 3              EG       = 1.17 )
.MODEL DBD D (
+ T_MEASURED= 25             IS       = 1e-15          N        = 1 )
.MODEL RBVC R (
+TC1      = 0.00092 )
.ENDS 5KASMC40A