*produced by Vishay General Semiconductor Taiwan *Sam Liao, 2022/11/7 .SUBCKT 5KASMC40A a c .PARAM RL = 2e+07 .PARAM RBD = 0.233 .PARAM RBVC = 46800 DF a 90 DF * Leakage RL a 90 'RL' * Breakdown RBD 90 4 'RBD' EBD 4 3 10 20 1 DBD 3 a DBD IBVC 0 10 0.001 RBVC 10 0 RBVC 'RBVC' RBDX 20 23 'RBD' DBVC 23 0 DBD IBVD 0 20 0.001 L1 90 c 1E-015 .MODEL DF D ( + T_MEASURED= 25 IS = 1.66667e-10 RS = 0.01375 +N = 1.35417 CJO = 4.2e-09 VJ = 1.0125 +M = 0.36875 FC = 0.5 TT = 1e-08 +XTI = 3 EG = 1.17 ) .MODEL DBD D ( + T_MEASURED= 25 IS = 1e-15 N = 1 ) .MODEL RBVC R ( +TC1 = 0.00092 ) .ENDS 5KASMC40A