*produced by Vishay General Semiconductor Taiwan
*Device:MSP3V3
*Sam Liao, 2022/11/9
*   PSPICE



.SUBCKT MSP3V3 a c 
.PARAM RL       = 16500
.PARAM RBD      = 0.139
.PARAM RBVC     = 4600

DF a 90 DF

* Leakage
RL a 90 'RL'


* Breakdown
RBD 90 4 'RBD'
EBD 4 3 10 20 1
DBD 3 a DBD
IBVC 0 10 0.001
RBVC 10 0 RBVC 'RBVC'

RBDX 20 23 'RBD'
DBVC 23 0 DBD
IBVD 0 20 0.001
L1 90 c 3.4E-010


.MODEL DF D (
++T_MEASURED= 25             IS       = 1e-09          RS       = 0.049375       
+N        = 2              CJO      = 8.1e-10        VJ       = 5.7            
+M       = 1.495          FC       = 0.5            TT       = 1e-08          
+XTI      = 3              EG       = 1.17 )
.MODEL DBD D (
++T_MEASURED= 25             IS       = 1e-15          N        = 1 )
.MODEL RBVC R (
+TC1      = 0 )
.ENDS MSP3V3