*produced by Vishay General Semiconductor Taiwan
*Sam Liao, 2022/12/16


.SUBCKT SMBJ15D a c 
.PARAM RL       = 2.8e+07
.PARAM RBD      = 0.245
.PARAM RBVC     = 17600

DF a 90 DF

* Leakage
RL a 90 'RL'


* Breakdown
RBD 90 4 'RBD'
EBD 4 3 10 20 1
DBD 3 a DBD
IBVC 0 10 0.001
RBVC 10 0 RBVC 'RBVC'

RBDX 20 23 'RBD'
DBVC 23 0 DBD
IBVD 0 20 0.001
L1 90 c 3.4E-010


.MODEL DF D (
+T_MEASURED = 25             IS       = 1e-09          RS       = 0.0428125      
+N        = 2              CJO      = 9e-10          VJ       = 1.75           
+MJ       = 0.253191       FC       = 0.5            TT       = 1e-08          
+XTI      = 3              EG       = 1.17 )
.MODEL DBD D (
+T_MEASURED = 25             IS       = 1e-15          N        = 1 )
.MODEL RBVC R (
+TC1      = 0 )
.ENDS SMBJ15D