*produced by Vishay General Semiconductor Taiwan
*Sam Liao, 2023/7/7


.SUBCKT TPC8V2A a c 
.PARAM RL       = 35100
.PARAM RBD      = 0.0291
.PARAM RBVC     = 8200

DF a 90 DF

* Leakage
RL a 90 'RL'


* Breakdown
RBD 90 4 'RBD'
EBD 4 3 10 20 1
DBD 3 a DBD
IBVC 0 10 0.001
RBVC 10 0 RBVC 'RBVC'

RBDX 20 23 'RBD'
DBVC 23 0 DBD
IBVD 0 20 0.001
L1 90 c 3.4E-010


.MODEL DF D (
+Trs1     = 0.00397025     T_MEASURED= 25             IS       = 7e-09          
+RS       = 0.00254301     N        = 1.58263        CJO      = 5.8e-09        
+VJ       = 0.52           MJ       = 0.24           FC       = 0.5            
+TT       = 1e-08          XTI      = 7.31463        EG       = 1.17 )
.MODEL DBD D (
+T_MEASURED= 25             IS       = 5.68198e-11    N        = 1 )
.MODEL RBVC R (
+TC1      = 0.00056 )
.ENDS TPC8V2A