*produced by Vishay General Semiconductor Taiwan
*Sam Liao, 2025/9/26




.SUBCKT SMB10J11A a c 
.PARAM RL       = 2.2e+06
.PARAM RBD      = 0.09417
.PARAM RBVC     = 12750

DF a 90 DF

* Leakage
RL a 90 'RL'


* Breakdown
RBD 90 4 'RBD'
EBD 4 3 10 20 1
DBD 3 a DBD
IBVC 0 10 0.001
RBVC 10 0 RBVC 'RBVC'

RBDX 20 23 'RBD'
DBVC 23 0 DBD
IBVD 0 20 0.001
L1 90 c 3.4E-010


.MODEL DBD D (
+T_MEASURED= 25             IS       = 1e-15          N        = 1 )
.MODEL DF D (
+Trs1     = 0.00397025     T_MEASURED= 25             IS       = 1e-08          
+RS       = 0.0141732      N        = 1.67552        CJO      = 2e-09          
+VJ       = 3.58151        M       = 0.5            FC       = 0.5            
+TT       = 1e-08          XTI      = 3              EG       = 1.11 )
.MODEL RBVC R (
+TC1      = 0 )
.ENDS SMB10J11A