*produced by Vishay General Semiconductor Taiwan
*Sam Liao, 2024/11/12




.SUBCKT SM5S11A a c 
.PARAM RL       = 1.1e+06
.PARAM RBD      = 0.02548
.PARAM RBVC     = 2580

DF a 90 DF

* Leakage
RL a 90 'RL'


* Breakdown
RBD 90 4 'RBD'
EBD 4 3 10 20 1
DBD 3 a DBD
IBVC 0 10 0.005
RBVC 10 0 RBVC 'RBVC'

RBDX 20 23 'RBD'
DBVC 23 0 DBD
IBVD 0 20 0.005
L1 90 c 3.4E-010


.MODEL DBD D (
+T_MEASURED= 25             IS       = 1e-15          N        = 1 )
.MODEL DF D (
+Trs1     = 0.00397025     T_MEASURED= 25             IS       = 7e-09          
+RS       = 0.010003       N        = 1.65445        CJO      = 1.2e-08        
+VJ       = 0.9            M       = 0.395          FC       = 0.5            
+TT       = 1e-08          XTI      = 7.31463        EG       = 1.17 )
.MODEL RBVC R (
+TC1      = 0.00072 )
.ENDS SM5S11A