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TrenchFET® Gen III Power MOSFETs
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TrenchFET® Gen III Power MOSFETs
Si Series
New breakthrough lowers RDS(on). Lowest max.
on-resistance at VGS = 4.5 V for 30 V in SO-8
footprint.
Features:
- Record-breaking 2.25 mΩ max. on-resistance at VGS = 4.5 V
- Record-breaking 98 mΩ-nC FOM at VGS = 4.5 V
- Thermally advanced PowerPAK® SO-8 (additional PowerPAK 1212-8, SO-8 options)
Applications:
- Low-side MOSFET in synchronous buck
- Synchronous rectification
- Or-ing
| Part Number | Package | VDS (V) | VGS (V) | RDS(on) at VGS = 10 V (Ω) |
RDS(on) at VGS = 4.5 V (Ω) |
Qg at VGS = 10 V (nC) |
Qg at VGS = 4.5 V (nC) |
FOM at VGS = 4.5 V (mW-nC) |
Samples |
| SiR440DP | PowerPAK SO-8 |
20 | 20 | 0.00155 | 0.002 | 100 | 43.5 | 87 | Available |
| SiR866DP | 20 | 20 | 0.0019 | 0.00255 | 71 | 35.3 | 90.015 | ||
| SiR890DP | 20 | 20 | 0.0029 | 0.004 | 42 | 20 | 80 | ||
| SiR476DP | 25 | 20 | 0.0017 | 0.0021 | 89 | 42.5 | 89.25 | ||
| SiR892DP | 25 | 20 | 0.0032 | 0.0042 | 40 | 20 | 84 | ||
| SiR850DP | 25 | 20 | 0.007 | 0.009 | 19 | 8.4 | 76 | ||
| Si7192DP | 30 | 20 | 0.0019 | 0.00225 | 90 | 43.5 | 98 | ||
| SiR468DP | 30 | 20 | 0.0057 | 0.0076 | 29 | 13.8 | 105 | ||
| SiR402DP | 30 | 20 | 0.006 | 0.008 | 28 | 12 | 96 | ||
| SiR462DP | 30 | 20 | 0.0079 | 0.01 | 20 | 8.8 | 88 | ||
| SiE860DF | PolarPAK® | 30 | 20 | 0.0023 | 0.003 | 70 | 34 | 102 | |
| Si4126DY | SO-8 | 30 | 20 | 0.00275 | 0.0034 | 70 | 30 | 102 | |
| SiS402DN | PowerPAK 1212-8 |
30 | 20 | 0.006 | 0.008 | 28 | 12 | 96 | |
| Si7716ADN | 30 | 20 | 0.0135 | 0.0165 | 15.4 | 7.3 | 120 |
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