2010 Super 12 » Super
Junction FET Gen 9 Power MOSFETs
- 597D and T97 Multi-Anode Tantalum Capacitors
- DrMOS 6x6 – SiC769
- WSMS and WSBS High Current Shunts (Current Sense)
- eSMP® Ultra-Low-VF SMD Schottky Barrier Rectifiers
- IHLP-6767 Power Inductors
- Super Junction FET Gen 9 Power MOSFETs
- MKP1848 DC-Link Film Capacitors
- High-Performance Gen 5.0 Schottky Diodes, 20 A
- LPS Series Resistors
- IGBT / MOSFET Drivers, VO3120 and VO3150A
- Non-Magnetic MLCCs
- TrenchFET® Gen III P-Channel MOSFETs
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Super Junction FET Gen 9 Power MOSFETs
22 A, 600 V MOSFETs with Super Junction technology for
improved RDS(on) x Qg figure of
merit (FOM)
Features
- RDS(on) as low as 0.19 Ω (max)
- 100 % avalanche tested and high peak current capability
- Lower RDS(on) x Qg FOM
Applications:
- Power factor correction (PFC) MOSFETs in switch mode power supplies (SMPS), lighting ballasts, ATX, servers, and LCD TVs
| Part Number | Package | VDS (V) |
VGS (± V) |
IDS (A) | RDS(on) (mΩ max) at VGS=10 V |
Qg (nC) max |
Ciss (pF) |
Crss (pF) |
| 25°C | ||||||||
| SiHF22N60S-E3 | TO220F | 600 | 20 | 22 | 190 | 98 | 2810 | 33 |
| SiHP22N60S-E3 | TO220 | 600 | 20 | 22 | 190 | 98 | 2810 | 33 |
| SiHG22N60S-E3 | TO247 | 600 | 20 | 22 | 190 | 98 | 2810 | 33 |
| SiHB22N60S-E3 | TO-263 | 600 | 20 | 22 | 190 | 98 | 2810 | 33 |