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12 Featured Products » SiSA04DN 30 V MOSFET
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- SiSA04DN 30 V MOSFET
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SiSA04DN 30 V MOSFET
30 V MOSFET using TrenchFET® Gen IV technology.
Features:
- Maximum on-resistance down to 2.15 mΩ in a 3.3 mm x 3.3 mm outline using state-of-the-art TrenchFET Gen IV technology
- Typical gate charge down to 22.5 nC, FOM down to 56
- Lowest RDS(on) * Qgd combination for the most efficient high-frequency switching
- Low Qgd and low Qgd:Qgs ratio for high immunity to shoot-through
- Thermally advanced PowerPAK® 1212-8 package
Applications:
- Synchronous rectification – isolated DC/DC power supply/telecom brick
- Synchronous buck converter – low-side MOSFET
- OR-ing, hot swap, solid-state relay
More Information:
Datasheet and Related
Information