SUPER 12 FEATURED
PRODUCTS
2012
SiSA04DN 30 V MOSFET
30 V MOSFET using
TrenchFET® Gen IV technology.
Features:
- Maximum on-resistance down to 2.15 mΩ in a 3.3 mm x
3.3 mm outline using state-of-the-art TrenchFET Gen IV
technology
- Typical gate charge down to 22.5 nC, FOM down to
56
- Lowest RDS(on) * Qgd
combination for the most efficient high-frequency
switching
- Low Qgd and low
Qgd:Qgs ratio for high immunity
to shoot-through
- Thermally advanced PowerPAK® 1212-8
package
Applications:
- Synchronous rectification – isolated DC/DC power
supply/telecom brick
- Synchronous buck converter – low-side
MOSFET
- OR-ing, hot swap, solid-state relay
More Information:
Datasheet and Related
Information
Product
Sheet