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MOSFETs
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Si7157DP
Lowest On-Resistance Ever for a P-Channel MOSFET, Down to 0.0016 Ω (max.)
Features
  • On-resistance at VGS = −10 V: 0.0016 Ω (max.)
  • On-resistance at VGS = −4.5 V: 0.002 Ω (max.)
  • Thermally-enhanced PowerPAK® SO-8 package(6.15 mm by 5.15 mm)
  • Lead (Pb)-free and halogen-free
  • TrenchFET® Gen III P-Channel Power MOSFET
  • 100 % Rg and UIS tested
Applications / Market Segments
  • Power management
    • Load switches
    • Battery switches
    • Adapter switches
  • Hot-swap applications
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