HV Fast Body Diode Power MOSFET Offers up to 10x
Reduction in Qrr
Features
Based on E Series Super Junction technology
Fast body diode provides as much as 10x reduction
in Qrr over the standard E
Series MOSFET for lifetime control
Designed and developed for soft switching
topologies along with similar standard E Series
on-resistance values
Scales of economy can be achieved within a
system using EF series throughout the design (in
place of standard E Series MOSFETs with similar on
resistance) in the hard switched topology
600 V, 33 A maximum, RDS(on) max. of 98
mΩ
28 A maximum, RDS(on) max. of 123 mΩ
option also available (SiHx28N60EF)
Package options including TO-220, TO-263
(D2PAK), and TO-247AC