VS-C10ET07T-M3 PRODUCT INFORMATION

650 V Power SiC Merged PIN Schottky Diode, 10 A
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FEATURES

Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses


Showing 1 to 10 of 10 entries
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Application Notes
How to Use an SiC Diode in a PFC Circuit
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Datasheet
650 V Power SiC Merged PIN Schottky Diode, 10 A
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Markings
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Product Literature
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