Vishay - 2009 Super 12
2009 Super 12  »   TrenchFET® Gen III Power MOSFETs
SUPER 12 FEATURED PRODUCTS
2009
TrenchFET® Gen III Power MOSFETs
Si Series
New breakthrough lowers RDS(on). Lowest max. on-resistance at VGS = 4.5 V for 30 V in SO-8 footprint.
Features:
  • Record-breaking 2.25 mΩ max. on-resistance at VGS = 4.5 V
  • Record-breaking 98 mΩ-nC FOM at VGS = 4.5 V
  • Thermally advanced PowerPAK® SO-8 (additional PowerPAK 1212-8, SO-8 options)
Applications:
  • Low-side MOSFET in synchronous buck
  • Synchronous rectification
  • Or-ing
Part Number Package VDS (V) VGS (V) RDS(on) at
VGS = 10 V (Ω)
RDS(on) at
VGS = 4.5 V (Ω)
Qg at
VGS = 10 V (nC)
Qg at
VGS = 4.5 V (nC)
FOM at
VGS = 4.5 V
(mW-nC)
Samples
SiR440DP PowerPAK
SO-8
20 20 0.00155 0.002 100 43.5 87 Available
SiR866DP 20 20 0.0019 0.00255 71 35.3 90.015
SiR890DP 20 20 0.0029 0.004 42 20 80
SiR476DP 25 20 0.0017 0.0021 89 42.5 89.25
SiR892DP 25 20 0.0032 0.0042 40 20 84
SiR850DP 25 20 0.007 0.009 19 8.4 76
Si7192DP 30 20 0.0019 0.00225 90 43.5 98
SiR468DP 30 20 0.0057 0.0076 29 13.8 105
SiR402DP 30 20 0.006 0.008 28 12 96
SiR462DP 30 20 0.0079 0.01 20 8.8 88
SiE860DF PolarPAK® 30 20 0.0023 0.003 70 34 102
Si4126DY SO-8 30 20 0.00275 0.0034 70 30 102
SiS402DN PowerPAK
1212-8
30 20 0.006 0.008 28 12 96
Si7716ADN 30 20 0.0135 0.0165 15.4 7.3 120
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