Vishay - 2010 Super 12
2010 Super 12  »   Super Junction FET Gen 9 Power MOSFETs
SUPER 12 FEATURED PRODUCTS
2010
Super Junction FET Gen 9 Power MOSFETs
22 A, 600 V MOSFETs with Super Junction technology for improved RDS(on) x Qg figure of merit (FOM)
Features
  • RDS(on) as low as 0.19 Ω (max)
  • 100 % avalanche tested and high peak current capability
  • Lower RDS(on) x Qg FOM
Applications:
  • Power factor correction (PFC) MOSFETs in switch mode power supplies (SMPS), lighting ballasts, ATX, servers, and LCD TVs
Part Number Package VDS
(V)
VGS
(± V)
IDS (A) RDS(on)
(mΩ max)
at VGS=10 V
Qg
(nC) max
Ciss
(pF)
Crss
(pF)
25°C
SiHF22N60S-E3 TO220F 600 20 22 190 98 2810 33
SiHP22N60S-E3 TO220 600 20 22 190 98 2810 33
SiHG22N60S-E3 TO247 600 20 22 190 98 2810 33
SiHB22N60S-E3 TO-263 600 20 22 190 98 2810 33