2010 Super 12 »
TrenchFET® Gen III P-Channel MOSFETs
- 597D and T97 Multi-Anode Tantalum Capacitors
- DrMOS 6x6 – SiC769
- WSMS and WSBS High Current Shunts (Current Sense)
- eSMP® Ultra-Low-VF SMD Schottky Barrier Rectifiers
- IHLP-6767 Power Inductors
- Super Junction FET Gen 9 Power MOSFETs
- MKP1848 DC-Link Film Capacitors
- High-Performance Gen 5.0 Schottky Diodes, 20 A
- LPS Series Resistors
- IGBT / MOSFET Drivers, VO3120 and VO3150A
- Non-Magnetic MLCCs
- TrenchFET® Gen III P-Channel MOSFETs
Features
- Reduced on-resistance up to 45 % for p-channel
devices
- Provide lower conduction
losses, saving power
- Longer time between charges for battery powered applications
- Greener use of power
- Provide lower conduction
losses, saving power
- Variety of package sizes, from PowerPAK®
SO-8 down to 1.6 mm x
1.6 mm PowerPAK® SC-75 - Breakdown voltage: 12 V to 30 V
Applications:
- Battery switches, adaptor and load switches for notebooks, laptops and netbooks
- Load switches for charging circuits and handheld devices such as smart phones, PDAs, MP3 players, digital cameras and camcorders
- Load switches and hot swapping for industrial products
More Information