Vishay - 2012 Super 12
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SUPER 12 FEATURED PRODUCTS
2012
SiSA04DN 30 V MOSFET

30 V MOSFET using TrenchFET® Gen IV technology.

Features:
  • Maximum on-resistance down to 2.15 mΩ in a 3.3 mm x 3.3 mm outline using state-of-the-art TrenchFET Gen IV technology
  • Typical gate charge down to 22.5 nC, FOM down to 56
  • Lowest RDS(on) * Qgd combination for the most efficient high-frequency switching
  • Low Qgd and low Qgd:Qgs ratio for high immunity to shoot-through
  • Thermally advanced PowerPAK® 1212-8 package
Applications:
  • Synchronous rectification – isolated DC/DC power supply/telecom brick
  • Synchronous buck converter &#8211 low-side MOSFET
  • OR-ing, hot swap, solid-state relay
More Information:

 Datasheet and Related Information
 Product Sheet