Video Library


Demonstration on Vishay's E Series 600 V and 650 V High Voltage E Series MOSFETs against competing products
MOSFET technologies for power conversion
Comparison between PowerPAIR® Gen IV against two PowerPAK® Gen IV products
E Series superjunction technology for hard-switched topologies
Max RDS(on) of 4 mΩ Provides Higher Efficiency
On-resistance at VGS = −10 V: 0.0016 Ω (max.)
Lowest low-Side on-resistance at VGS = 4.5 V among devices with compatible footprints.


Si7157DP Low On-Resistance P-Channel MOSFET

On-resistance at VGS = −10 V: 0.0016 Ω (max.)