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MOSFETs | Low-Voltage (8)
TrenchFET® P-Channel Gen III
Breakthrough p-channel technology dramatically cuts RDS(on)
  • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best
  • Down to sub 2 mΩ in SO-8 footprint area
  • Variety of package sizes, from PowerPAK® SO-8 down to 1.6 mm x 1.6 mm PowerPAK SC-75 and 0.8 mm x 0.8 mm chipscale MICRO FOOT®
  • Low conduction losses save power in battery operated systems
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Automotive MOSFETs
Dedicated automotive process flow reduces defects
  • Process design optimized for automotive excellence
  • AEC-Q101 qualified – temperature ranges up to 175 °C
  • Low on-resistance n- and p-channel TrenchFET® technologies
  • Includes innovative space-saving packaging options
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1.2 V Rated
Industry-first MOSFETs with non-resistance rated at VGS = 1.2 V
  • Optimized for use with the low-voltage core ICs
  • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V
  • Help reduce power consumption and increase battery usage time
  • Single n- and p-channel device options
  • Footprints as small as 0.8 mm x 0.8 mm
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Product Sheet
MICRO FOOT®
Industry's smallest MOSFETs, lowest on-resistance for chipscale packaging
  • Footprints of 1.5 mm x 1 mm, 1.2 mm x 1 mm, 1 mm x 1 mm , and 0.8 mm x 0.8 mm
  • Smallest height of 0.4 mm
  • Help reduce power consumption and increase battery usage time
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Product Sheet
PowerPAK® SC-70
2 mm x 2 mm footprint area is 50 % that of the TSOP-6
  • Comparable on-resistance, down to 9.4 mΩ
  • Low profile down to 0.6 mm is 40 % thinner than TSOP-6
  • 75 % higher maximum power dissipation
  • Includes devices with on-resistance ratings down to 1.2 V
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Product Sheet
PowerPAK® ChipFET®
Replaces TSOP-6 and SO-8 MOSFETs for lower thermal resistance and smaller footprint
  • Compact 3 mm x 1.8 mm footprint
  • 3 W maximum power dissipation
  • Single, dual, co-packaged n- and p-channel and MOSFET + Schottky versions
  • Breakdown voltage ratings from 8 V to 20 V for p-channel and 20 V to 60 V for n-channel
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Product Sheet
PowerPAK® SC-75
 
Ultra-low on-resistance and size
  • PowerPAK SC-75 provides same 1.6 mm x 1.6 mm footprint as standard SC-75, but much lower on-resistance
    • N-channel RDS(on) as low as 0.019 Ω
    • P-channel RDS(on) as low as 0.0255 Ω
  • Single and dual n- and p-channel versions available, including device with on-resistance ratings down to 1.2 V
  • Gives designers ultra-low on-resistance and ultra-small size in one device for saving power in space-constrained handheld applications
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High Performance 40 V to 150 V Power MOSFETs
Ultra-low on-reistance next generation technology
  • VGS = 10 V and 4.5 V on-resistance ratings, include industry best on-resistance and FOMs
  • VGS = 4.5 V rated devices enables lower gate drive and lower losses; allows lower voltage, lower cost 5 V PWM ICs
  • Thermally advanced PowerPAK® packaging
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Product Sheet