Vishay Power Management Virtual Trade Show
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MOSFETs | High-Voltage (3)
600 V and 650 V High Performance Superjunction MOSFETs
  • 30 % reduction in conduction losses
  • Increased power density and higher efficiencies
  • On-resistance down to 39 mΩ
  • Available in all standard TO packages
High Performance 40 V to 150 V Power MOSFETs
Ultra-low on-reistance next generation technology
  • VGS = 10 V and 4.5 V on-resistance ratings, include industry best on-resistance and FOMs
  • VGS = 4.5 V rated devices enables lower gate drive and lower losses; allows lower voltage, lower cost 5 V PWM ICs
  • Thermally advanced PowerPAK® packaging
High-Performance 400 V, 500 V, and 600 V MOSFETs
  • Optimized design
    • Ultra-low area specific on-resistance (RDS(on))
    • Lower input capacitance (Ciss)
    • Reduced capacitive switching losses
    • High body diode ruggedness
    • Ultra-low gate charge (Qg)
    • Avalanche energy rated (UIS)
  • Optimal efficiency and operation
    • Simple gate drive circuitry
    • Best in class figure of merit (FOM): RDS(on) x Qg
    • Fast switching
Selector Guide
Product Sheet