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MOSFETs | Low-Voltage (8)
Automotive MOSFETs
 
Dedicated automotive process flow reduces defects
  • Process design optimized for automotive excellence
  • AEC-Q101 qualified – temperature ranges up to 175 °C
  • Low on-resistance n- and p-channel Trench technologies
  • Includes innovative space-saving packaging options
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TrenchFET® Gen IV
 
Breakthrough technology lowers on-resistance down to just 0.00135 Ω at VGS = 4.5 V
  • Next-generation technology optimizes several key specifications:
    • Down to 0.00135 Ω at VGS = 4.5 V
    • Down to ultra-low 0.001 Ω at VGS = 10 V
    • Very low Qgd and exceptionally low Qgd / Qgs ratio: < 0.5
    • Qgd / Qgs ratio down to 0.3
    • Improved immunity to CdV/dt gate coupling
  • Thermally enhanced PowerPAK® packaging increases system power density
    • Larger current handling capability with PowerPAK SO-8
    • Achieve equal or less power loss in 1/3 the footprint area with PowerPAK 1212-8
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Product Sheet
High Performance 40 V to 150 V Power MOSFETs
Ultra-low on-reistance next generation technology
  • VGS = 10 V and 4.5 V on-resistance ratings, include industry best on-resistance and FOMs
  • VGS = 4.5 V rated devices enables lower gate drive and lower losses; allows lower voltage, lower cost 5 V PWM ICs
  • Thermally advanced PowerPAK® packaging
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Product Sheet
PowerPAIR®
Co-packaged MOSFETs reduce space, increase performance over two discretes
  • High- and low-side MOSFETs in one compact package
  • Three choices of size:
    • 6 mm x 5 mm
    • 6 mm x 3.7 mm
    • 3 mm x 3 mm
  • On-resistance down to 1.3 mΩ
  • Maximum current up to > 40 A
  • Lowers solution space and cost over two discrete MOSFETs, saving clearance and labeling space between them
  • Simplifies layout
  • Reduces parasitic inductance from PCB traces, increasing efficiency and reducing ringing
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Product Sheet
SkyFET®
Integrated MOSFET and Schottky diode solution increases efficiency
  • Both components on one monolithic chip reduces on-resistance
  • Reduces body diode power losses
  • Eliminated external Schottky diode for space and solution cost savings
  • Ideal low-side switch for synchronous rectification
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Product Sheet
PowerPAK® SC-70
2 mm x 2 mm footprint area is 50 % that of the TSOP-6
  • Comparable on-resistance, down to 9.4 mΩ
  • Low profile down to 0.6 mm is 40 % thinner than TSOP-6
  • 75 % higher maximum power dissipation
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Product Sheet
PowerPAK® ChipFET®
Replaces TSOP-6 and SO-8 MOSFETs for lower thermal resistance and smaller footprint
  • Compact 3 mm x 1.8 mm footprint
  • 3 W maximum power dissipation
  • Single, dual, co-packaged n- and p-channel and MOSFET + Schottky versions
  • Breakdown voltage ratings from 8 V to 20 V for p-channel and 20 V to 60 V for n-channel
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Product Sheet
PolarPAK®
Brings standard packaging to double-sided cooling
  • Dual heat dissipation paths double current density (> 60 A)
  • Standard packaging provides better die protection, reliability and easier manufacturing handling
  • 20 V to 200 V devices
  • Fixed footprint and pad layout across family, ≤ 100 V and ≥ 150 V
  • Licensed by multiple sources
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Product Sheet