MALVERN, Pa. — Jan. 28, 2019 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the latest device in its fourth generation of 600 V E Series power MOSFETs. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the Vishay Siliconix n-channel SiHH068N60E slashes on-resistance by 27 % compared with previous-generation 600 V E Series MOSFETs, while delivering 60 % lower gate charge. This results in the industry’s lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.

Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems. With the SiHH068N60E and upcoming devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and hard-switched DC/DC converter topologies.

Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHH068N60E features low typical on-resistance of 0.059 Ω at 10 V and ultra-low gate charge down to 53 nC. The device’s FOM of 3.1 Ω*nC is 12 % lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHH068N60E provides low effective output capacitances C_o(er) and C_o(tr) of 94 pf and 591 pF, respectively. These values translate into reduced conduction and switching losses to save energy.

Offered in the PowerPAK^® 8x8 package, the device released today is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 % UIS testing.

Samples and production quantities of the SiHH068N60E are available now, with lead times of 10 weeks.